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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *DARLINGTON *High DC current gain *Complement to type MJ2500/2501 APPLICATIONS *For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ3000/3001 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJ3000 VCBO Collector-base voltage MJ3001 MJ3000 VCEO Collector-emitter voltage MJ3001 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 10 0.2 150 200 -55~200 V A A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJ3000 IC=0.1A ;IB=0 MJ3001 IC=5A; IB=20mA IC=10A; IB=50mA IC=5A ; VCE=3V MJ3000 ICER Collector cut-off current MJ3001 MJ3000 ICEO Collector cut-off current MJ3001 IEBO hFE Emitter cut-off current DC current gain VCE=40V; IB=0 VEB=5V; IC=0 IC=5A ; VCE=3V VCE=60V; RBE=1.0k? TC=150 VCE=80V; RBE=1.0k? TC=150 VCE=30V; IB=0 80 CONDITIONS MJ3000/3001 SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V VCE(sat)-1 VCE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2.0 4.0 3.0 1.0 5.0 1.0 5.0 V V V mA 1.0 mA 2.0 1000 mA THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJ3000/3001 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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